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Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures

Basic information
Original title:Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures
Authors:Josef Humlíček, Luděk Bočánek, Karel Navrátil, Petr Pánek, Radoslav Švehla
Further information
Citation:HUMLÍČEK, Josef, Luděk BOČÁNEK, Karel NAVRÁTIL, Petr PÁNEK and Radoslav ŠVEHLA. Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures (Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures). Solid State Communications, UK: Elsevier Science, 1995, 93(1995), No 9, p. 725-728. ISSN 0038-1098.Export BibTeX
@article{197243,
author = {Humlíček, Josef and Bočánek, Luděk and Navrátil, Karel and Pánek, Petr and Švehla, Radoslav},
article_location = {UK},
article_number = {9},
language = {eng},
issn = {0038-1098},
journal = {Solid State Communications},
title = {Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures},
volume = {93(1995)},
year = {1995}
}
Original language:English
Field:Solid matter physics and magnetism
Type:Article in Periodical

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