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IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES

Basic information
Original title:IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES
Authors:Mojmír Meduňa, Jiří Novák, Václav Holý, Claudiu Falub, Günther Bauer, Detlev Grützmacher
Further information
Citation:MEDUŇA, Mojmír, Jiří NOVÁK, Václav HOLÝ, Claudiu FALUB, Günther BAUER a Detlev GRÜTZMACHER. IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES. Materials Structure in Chemistry, Biology, Physics and Technology, Praha, 2006, roč. 13, č. 3, s. 161. ISSN 1211-5894.Export BibTeX
@article{710342,
author = {Meduňa, Mojmír and Novák, Jiří and Holý, Václav and Falub, Claudiu and Bauer, Günther and Grützmacher, Detlev},
article_location = {Praha},
article_number = {3},
keywords = {x-ray diffraction; interdiffusion; SiGe},
language = {eng},
issn = {1211-5894},
journal = {Materials Structure in Chemistry, Biology, Physics and Technology},
title = {IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES},
volume = {13},
year = {2006}
}
Original language:English
Field:Solid matter physics and magnetism
Type:Article in Periodical
Keywords:x-ray diffraction; interdiffusion; SiGe

We have studied series of strain symmetrized multiple quantum well structures grown on Si0.25Ge0.25 and Si0.5Ge0.5 pseudosubstrates. The Ge content in these structures was 30% and 80% with multilayer periods in the range from 6 to 13 nm. X-ray reflectivity and diffraction reciprocal space maps for all structures have been recorded at room temperature and during annealing.

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