IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES
|Original title:||IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES|
|Authors:||Mojmír Meduňa, Jiří Novák, Václav Holý, Claudiu Falub, Günther Bauer, Detlev Grützmacher|
|Field:||Solid matter physics and magnetism|
|Type:||Article in Periodical|
|Keywords:||x-ray diffraction; interdiffusion; SiGe|
We have studied series of strain symmetrized multiple quantum well structures grown on Si0.25Ge0.25 and Si0.5Ge0.5 pseudosubstrates. The Ge content in these structures was 30% and 80% with multilayer periods in the range from 6 to 13 nm. X-ray reflectivity and diffraction reciprocal space maps for all structures have been recorded at room temperature and during annealing.