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IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES

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Original title:IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES
Authors:Mojmír Meduňa, Jiří Novák, Václav Holý, Claudiu Falub, Günther Bauer, Detlev Grützmacher
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Original language:English
Field:Solid matter physics and magnetism
Type:Article in Periodical
Keywords:x-ray diffraction; interdiffusion; SiGe

We have studied series of strain symmetrized multiple quantum well structures grown on Si0.25Ge0.25 and Si0.5Ge0.5 pseudosubstrates. The Ge content in these structures was 30% and 80% with multilayer periods in the range from 6 to 13 nm. X-ray reflectivity and diffraction reciprocal space maps for all structures have been recorded at room temperature and during annealing.

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