Publication details

<< back
 

Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules

Basic information
Original title:Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules
Authors:Vlastimil Křápek, Petr Klenovský, Armando Rastelli, Oliver G Schmidt, Dominik Munzar
Further information
Citation:KŘÁPEK, Vlastimil, Petr KLENOVSKÝ, Armando RASTELLI, Oliver G SCHMIDT and Dominik MUNZAR. Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules. Journal of Physics: Conference Series, Institute of Physics Publishing, 2010, vol. 245, No 012027. ISSN 1742-6588.Export BibTeX
@article{924629,
author = {Křápek, Vlastimil and Klenovský, Petr and Rastelli, Armando and Schmidt, Oliver G and Munzar, Dominik},
article_number = {012027},
keywords = {Excitons and related phenomena; Tunneling; Quantum dots; Semiconductor compounds},
language = {eng},
issn = {1742-6588},
journal = {Journal of Physics: Conference Series},
title = {Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules},
url = {http://iopscience.iop.org/1742-6596/245/1/012027},
volume = {245},
year = {2010}
}
Original language:English
Field:Solid matter physics and magnetism
WWW:link to a new windowhttp://iopscience.iop.org/1742-6596/245/1/012027
Type:Article in Periodical
Keywords:Excitons and related phenomena; Tunneling; Quantum dots; Semiconductor compounds

We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.

Related projects:

 
 
top