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Optical and mechanical characterization of ultrananocrystalline diamond films prepared in dual frequency discharges

Basic information
Original title:Optical and mechanical characterization of ultrananocrystalline diamond films prepared in dual frequency discharges
Authors:Monika Karásková, Lenka Zajíčková, Vilma Buršíková, Daniel Franta, David Nečas, Olga Bláhová, Jiří Šperka
Further information
Citation:KARÁSKOVÁ, Monika, Lenka ZAJÍČKOVÁ, Vilma BURŠÍKOVÁ, Daniel FRANTA, David NEČAS, Olga BLÁHOVÁ a Jiří ŠPERKA. Optical and mechanical characterization of ultrananocrystalline diamond films prepared in dual frequency discharges. Surface & coatings technology, Elsevier Science, 2010, roč. 204, 12-13, s. 1997–2001. ISSN 0257-8972.Export BibTeX
@article{895715,
author = {Karásková, Monika and Zajíčková, Lenka and Buršíková, Vilma and Franta, Daniel and Nečas, David and Bláhová, Olga and Šperka, Jiří},
article_number = {12-13},
keywords = {ultrananocrystalline diamond; bias enhanced nucleation; indentation hardness; ellipsometry; FTIR},
language = {eng},
issn = {0257-8972},
journal = {Surface & coatings technology},
title = {Optical and mechanical characterization of ultrananocrystalline diamond films prepared in dual frequency discharges},
volume = {204},
year = {2010}
}
Original language:English
Field:Plasma physics
Type:Article in Periodical
Keywords:ultrananocrystalline diamond; bias enhanced nucleation; indentation hardness; ellipsometry; FTIR

Ultrananocrystalline diamond (UNCD) films were deposited directly on polished c-Si substrates in microwave discharge (2.45 GHz) combined with rf capacitive plasma (13.56 MHz) ignited at the substrate electrode. The rf discharge induced a dc self-bias accelerating ions towards the growing film during the whole deposition process. The substrate was either preheated in hydrogen discharge to the deposition temperature of 900 C or the deposition of intermediate layer started at about 200 C and reached 900 C in the 5th minute. The latter procedure resulted in the deposition of coating with the hardness of 70 GPa and very good fracture toughness. The analysis of optical measurement in UV-IR range confirmed the presence of 250 nm thick intermediate layer containing DLC and SiC materials.

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