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Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture

Basic information
Original title:Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture
Authors:Lenka Zajíčková, Daniel Franta, David Nečas, Vilma Buršíková, Mihai George Muresan, Vratislav Peřina, Christoph Cobet
Further information
Citation:ZAJÍČKOVÁ, Lenka, Daniel FRANTA, David NEČAS, Vilma BURŠÍKOVÁ, Mihai George MURESAN, Vratislav PEŘINA and Christoph COBET. Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture. Thin Solid Films, Elsevier, 2011, vol. 519, No 13, p. 4299-4308. ISSN 0040-6090. doi:10.1016/j.tsf.2011.02.021.Export BibTeX
@article{940456,
author = {Zajíčková, Lenka and Franta, Daniel and Nečas, David and Buršíková, Vilma and Muresan, Mihai George and Peřina, Vratislav and Cobet, Christoph},
article_number = {13},
doi = {http://dx.doi.org/10.1016/j.tsf.2011.02.021},
keywords = {Diamond-like carbon; Amorphous hydrogenated carbon; Optical properties; Band structure},
language = {eng},
issn = {0040-6090},
journal = {Thin Solid Films},
title = {Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture},
url = {http://dx.doi.org/10.1016/j.tsf.2011.02.021},
volume = {519},
year = {2011}
}
Original language:English
Field:Solid matter physics and magnetism
WWW:link to a new windowhttp://dx.doi.org/10.1016/j.tsf.2011.02.021
Type:Article in Periodical
Keywords:Diamond-like carbon; Amorphous hydrogenated carbon; Optical properties; Band structure

The optical properties and structure of a-C:H films were modified by addition of nitrogen into the CH4/H2 deposition mixture. Three films prepared in capacitively coupled rf discharge were compared: (a) hydrogenated diamond like carbon film with hydrogen content of 34 % and indentation hardness of 21.7 GPa, (b) hard a-C:H:N film with nitrogen content of 13 % and indentation hardness of 18.5 GPa and (c) soft a-C:H:N film with nitrogen content of 10 % and indentation hardness of 6.7 GPa. It is shown how the parametrized density of states model describing dielectric response of electronic interband transitions can be applied to modified a-C:H:N and how it can be combined with correct treatment of transmittance measured in infrared range using additional Gaussian peaks in joint density of phonon states. This analysis resulted in determination of film dielectric function in wide spectral range (0.045-30 eV) and provided also information about the density of states of valence and conduction bands and lattice vibrations.

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