Publication details
Metrology of epitaxial layers *GaN
| Authors | |
|---|---|
| Year of publication | 2014 |
| MU Faculty or unit | |
| Description | *Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. · Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. · Perform correlation of measurement with FTIR system. · Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. · Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers. |