Publication details
SiC characterization using optical and x-ray techniques
| Authors | |
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| Year of publication | 2015 |
| MU Faculty or unit | |
| Description | *Goal: Using methods available at Department of Condensed Matter Physics, characterize optical and crystallographic properties of silicon carbide. Description: ON Semiconductor Czech Republic is running a proof-of-concept project evaluating the potential of silicon carbide devices. Since SiC material properties are signif- icantly different from those of silicon, their knowledge is important to consider the future fabrication process. The goal of this project is the feasibility evaluation of optical and X-ray methods for SiC study, as well as basic characterization of optical properties and crystallographic quality of provided samples. Project milestones are: • Characterize SiC optical properties in the range critical for wafer fab tools (UV-VIS- NIR), investigate non-uniformity of optical parameters on SiC wafer. • Evaluate potential of other optical characterization techniques (IR, Raman). • Perform a feasibility study of x-ray methods for characterization of crystallographic quality and defects in SiC. SiC samples will be supplied by ON Semiconductor.* |