Publication details
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers
| Authors | |
|---|---|
| Year of publication | 2019 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Crystal Growth |
| MU Faculty or unit | |
| Citation | |
| Web | Full Text |
| Doi | http://dx.doi.org/10.1016/j.jcrysgro.2018.10.046 |
| Keywords | Semiconducting silicon compounds; Carbides; High resolution X-ray diffraction; Planar defects; Low dimensional structures |
| Description | We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0]. |
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