Publication details
Metody měření polovodičových součástek: rtg, optická spektroskopie
| Title in English | Masurement methods of semiconductor devices: X-ray, optical spectroscopy |
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| Authors | |
| Year of publication | 2020 |
| MU Faculty or unit | |
| Citation | |
| Description | The report deals with methods of semiconductor material analysis. X-ray diffraction methods of elastic strain determination, doping inhomogeneities is highly doped silicon. The optical spectroscopy was used to determine impurity concentration in highly doped silicon wafers. |
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