Optical characterization of DLC:Si films prepared by PECVD

• Authors: FRANTA Daniel; BURŠÍKOVÁ Vilma; ZAJÍČKOVÁ Lenka
• Year of publication: 2001
• Type: Article in Proceedings
• Conference: Proceedings of 13th Symposium on Application of Plasma Processes
• MU Faculty or unit: Faculty of Science
• Web: http://hydra.physics.muni.cz/~franta/bib/SAPP13_87.html
• Field: Plasma physics
• Description: Multi-sample modification of variable angle of incidence spectroscopic ellipsometry (VASE) was used to characterize silicon doped diamond like carbon (DLC:Si) films prepared by plasma enhanced chemical vapor deposition (PECVD). These films were prepared on wafers of silicon single crystal in the planar capacitively coupled RF reactor. The gas feed for deposition was a mixture of methane (CH4), hexamethyldisiloxane (HMDSO) and argon (Ar).

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