Effect of Structural Imperfections on the Characteristics of YSZ Dielectric Layers Grown by E-beam Evaporation fron the Crystalline Taggets

• Authors: HARTMANNOVÁ Mária; JERGEL Martin; NAVRÁTIL Vladislav; NAVRÁTIL Karel; GMUCOVÁ Katarina; GANDARILLA F.C.; ZEMEK Jan; CHROMIK Stefan; KUNDRACIK Frantiaek
• Year of publication: 2005
• Type: Article in Proceedings
• Conference: Acta Physica Slovaca
• MU Faculty or unit: Faculty of Education
• Field: Solid matter physics and magnetism
• Keywords: Yttria stabilized zirconia; thin films; electrical conductivity; microhardness; refractive index; relative permitivity
• Description: The films under study were deposited by e-beam evaporation on yttria-stabilized zirconia crystalline samples on the n-doped Si (111) substrate at 750 C. The electrical conductivity and the activation energy as the function of the yttria content indicated the influence of isolated oxygen ion vacancies as well as the associated point defects.The measured microhardness data as well as a high refractive index render from YSZ a promising material for protective coatings and optical applications respectively.

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