Publication details
Infrared Response of Heavily Doped p-type Si and SiGe Alloys from Ellipsometric Measurements
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Proceedings |
| Conference | CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | silico-germanium alloys; infrared ellipsometry |
| Description | We report here ellipsometric spectra of Si and SiGe alloys heavily doped with boron. In the mid-infrared range, the response can be separated into the contributions of free-hole plasma and direct intervalence transitions. The first contribution extrapolates correctly to the zero-frequency resistance, the second is in a good agreement with the 8-band k.p calculation. |
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