Publication details
Nucleation and Precipitation of Interstitial Oxygen in Czochralski Silicon
| Authors | |
|---|---|
| Year of publication | 2006 |
| Type | Article in Proceedings |
| Conference | Proceedings of The Tenth Scientific and Business Conference SILICON 2006 |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | Nucleation; Precipitation; Interstitial oxygen; Silicon; Infrared absorption |
| Description | Infrared absorption spectroscopy has been applied to study interstitial oxygen (Oi) and oxygen precipitates in a series of multi-step annealed silicon samples. We have adopted Ham's theory of diffusion-limited precipitation. Then we have been able to determine concentration of the oxygen precipitates in the samples from decrease of Oi concentration during the high temperature annealing. We have also used triple-axis high-resolution x-ray diffraction to measure reciprocal space maps of these samples. |
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