Publication details
High Temperature in-situ Investigation of Si/SiGe Multilayers and Cascade Structures
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Periodical |
| Magazine / Source | Materials Structure in Chemistry, Biology, Physics and Technology |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | interdiffusion; x-ray diffraction; reflectivity |
| Description | From the temporal evolution of x-ray reflectivity data at high temperature, we obtained an evolution of Si-SiGe interfaces induced by diffusion. The results of our experiment demonstrate that the critical temperature for Ge inter-diffusion process in Si0.7Ge0.3 and Si0.2Ge0.8 depends not only on Ge content but also on the thickness of the individual layers. |
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