Publication details
In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering
| Authors | |
|---|---|
| Year of publication | 2007 |
| Type | Article in Periodical |
| Magazine / Source | Semicond. Sci. Technol. |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | interdiffusion; x-ray diffraction; reflectivity |
| Description | From the temporal evolution of x-ray reflectivity and diffraction data at high temperature, we obtained an evolution of Si-SiGe interfaces induced by diffusion. The results of our experiment demonstrate that the activation energy and diffusion prefactor depend on Ge content linearly and exponentialy. |
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