Publication details
On Formation of Very Thin SiO2/a
-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
| Basic information | |
|---|---|
| Original title: | On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge |
| Authors: | Martin Kráľ, Andrej Buček, Miroslav Záhoran, Mirko Černák, Jaroslav Rusnák, Emil Pinčík |
| Further information | |
|---|---|
| Citation: | KRÁĽ, Martin, Andrej BUČEK, Miroslav ZÁHORAN, Mirko ČERNÁK,
Jaroslav RUSNÁK and Emil PINČÍK. On Formation of Very Thin
SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion
Implantation and Dielectric Barrier Discharge. In Proc. SREN
2005. 1. vyd. Itálie: U, 2005. p. 47-48, 2 pp. ISBN
80-223-2045-5.Export BibTeX @inproceedings{599311, author = {Kráľ, Martin and Buček, Andrej and Záhoran, Miroslav and Černák, Mirko and Rusnák, Jaroslav and Pinčík, Emil}, address = {Itálie}, booktitle = {Proc. SREN 2005}, edition = {1}, language = {eng}, location = {Itálie}, isbn = {80 -223-2045-5},pages = {47 -48},publisher = {U}, title = {On Formation of Very Thin SiO2/a -Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge},year = {2005} } |
| Original language: | English |
| Field: | Plasma physics |
| Type: | Article in Proceedings |
On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
