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Oxidation of Silicon Surface by DCSBD

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SKÁCELOVÁ Dana HANIČINEC Martin SŤAHEL Pavel ČERNÁK Mirko

Rok publikování 2012
Druh Článek ve sborníku
Konference NANOCON 2012, 4th INTERNATIONAL CONFERENCE
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www http://www.nanocon.eu/files/proceedings/04/reports/772.pdf
Obor Fyzika plazmatu a výboje v plynech
Klíčová slova Coplanar DBD; silicon dioxide; oxidation; atmospheric pressure plasma
Popis In the present work plasma oxidation of crystalline silicon (c-Si) surface in diffuse coplanar surface barrier discharge (DCSBD) generated at atmospheric pressure has been studied. Silicon surface has been oxidized in oxygen and argon plasma. The surface properties have been studied by means scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses. It was found that thin layer of amorphous silicon dioxide during the short treatment time was formed. Oxidation by DCSBD could represent new alternative of a low cost and fast oxidation process.
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