Mgr. Petr Klenovský, Ph.D.
Researcher III, Department of Condensed Matter Physics
Office: pav. 09/02020
Kotlářská 267/2
611 37 Brno
Phone: | +420 549 49 3193 |
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social and academic networks: |
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Total number of publications: 33
2021
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Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
Light: Science & Applications, year: 2021, volume: 10, edition: 1, DOI
2020
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Theory of magneto-optical properties of neutral and charged excitons in GaAs/AlGaAs quantum dots
Physical Review B, year: 2020, volume: 102, edition: 12, DOI
2019
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Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots
Annalen der Physik (Berlin), year: 2019, volume: 531, edition: 6, DOI
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Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots
Physical Review B, year: 2019, volume: 100, edition: 11, DOI
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Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment
Physical Review B, year: 2019, volume: 99, edition: 19, DOI
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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
Physical Review B, year: 2019, volume: 100, edition: 19, DOI
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Resolving the temporal evolution of line broadening in single quantum emitters
Optics Express, year: 2019, volume: 27, edition: 24, DOI
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Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots
Physical Review B, year: 2019, volume: 100, edition: 23, DOI
2018
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Effect of second-order piezoelectricity on the excitonic structure of stress-tuned In(Ga)As/GaAs quantum dots
Physical Review B, year: 2018, volume: 97, edition: 24, DOI
2017
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Ellipsometry of surface layers on a 1-kg sphere from natural silicon
Applied Surface Science, year: 2017, volume: 421, edition: January, DOI