Mgr. Petr Klenovský, Ph.D.
Researcher III, Department of Condensed Matter Physics
Office: pav. 09/02020
Kotlářská 267/2
611 37 Brno
Phone: | +420 549 49 3193 |
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social and academic networks: |
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Total number of publications: 33
2017
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Excitonic structure and pumping power dependent emission blue-shift of type-II quantum dots
Scientific Reports, year: 2017, volume: 7, edition: March, DOI
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Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect
Physical Review B, year: 2017, volume: 96, edition: 4, DOI
2016
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Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure
ACTA PHYSICA POLONICA A, year: 2016, volume: 129, edition: 1A, DOI
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Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules
ACTA PHYSICA POLONICA A, year: 2016, volume: 129, edition: 1A, DOI
2015
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Excitonic fine structure splitting in type-II quantum dots
Physical Review B, year: 2015, volume: 92, edition: 19, DOI
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Polarization anisotropy of the emission from type-II quantum dots
Physical Review B, year: 2015, volume: 92, edition: 24, DOI
2012
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Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Physical Review B, year: 2012, volume: 86, edition: 11, DOI
2011
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ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS
3rd International Conference on NANOCON, year: 2011
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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
Physical Review B, year: 2011, volume: 83, edition: 12, DOI
2010
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Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
Applied Physics Letters, year: 2010, volume: 97, edition: 203107