Publication details

Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon

Authors

FALUB Claudiu Valentin KREILIGER Thomas TABOADA A. ISA Fabio CHRASTINA Daniel ISELLA G. MULLER E. MEDUŇA Mojmír BERGAMASCHINI R. MARZEGALLI Anna BONERA E. PEZZOLI F. MIGLIO Leo NIEDERMANN P. NEELS A. PEZOUS A. KAUFMANN R. DOMMANN A. VON KAENEL Hans

Year of publication 2012
Type Article in Proceedings
Conference 2012 International Semiconductor Conference (CAS) Vols 1 and 2
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698
Doi http://dx.doi.org/10.1109/SMICND.2012.6400698
Field Solid matter physics and magnetism
Keywords monolithic integration; high quality Ge; elimination of cracking; threading-dislocation densities; epitaxial necking; patterned Si substrates; electrical properties
Description In the quest for a Ge x-ray detector monolithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.

More info