Publication details
Ferromagnetism with Curie temperature of 500 K in laser-ablated Ga2O3 thin films
| Authors | |
|---|---|
| Year of publication | 2026 |
| Type | Peer-reviewed scientific article |
| Magazine / Source | MATERIALS CHEMISTRY AND PHYSICS |
| MU Faculty or unit | |
| Citation | |
| web | https://www.sciencedirect.com/science/article/pii/S0254058426008151 |
| Doi | https://doi.org/10.1016/j.matchemphys.2026.132822 |
| Keywords | Ferromagnetism; Thin films; Spintronic devices |
| Attached files | |
| Description | Room-temperature ferromagnetism in thin films of semiconducting oxides is a great interest for spintronic applications. In this study, Ga2O3 thin films were deposited on C-cut Al2O3 substrates by pulsed laser deposition and exhibited robust room-temperature ferromagnetism. X-ray diffraction confirms that when the films were deposited with atmosphere of 100% oxygen and 100% Ar, ß-Ga2O3 and ?-Ga2O3 phases could be obtained, respectively. On the other hand, X-ray photoelectron spectroscopy reveals significant variations in oxygen vacancies and gallium oxidation states between those two phases. Magnetic measurements further demonstrate a well-pronounced in-plane ferromagnetism. A high Curie temperature of approximately 500 K is observed. These results indicate that the magnetic properties of Ga2O3 thin films can be effectively tuned via phase control, thickness variation, and defect engineering, providing an effective route toward spintronic device applications. |
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