Publication details
Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction
| Authors | |
|---|---|
| Year of publication | 2002 |
| Type | Article in Periodical |
| Magazine / Source | Appl. Phys. Lett. |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction; Appl. Phys. Lett. 80; 3521-3523 (2002). |
| Description | Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction |
| Related projects: |