Publication details
Nitrogen in Czochralski-grown silicon
| Authors | |
|---|---|
| Year of publication | 2002 |
| Type | Article in Proceedings |
| Conference | SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | silicon; nitrogen |
| Description | Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectroscopy (SIMS) are used to study nitrogen-doped Czochralski-grown (CZ) crystal. We observe nitrogen-related vibrational modes typical for CZ silicon and estimate nitrogen content to be 1.6x10^15 cm-3 from its quantitative analysis. This value is in a good agreement with result of 2.4x10^15 cm-3 from calculations assuming constant segregation coefficient 7x10^(-4). On the other hand, SIMS measurements give much higher value of 8.3x10^15 cm-3. Only 4-5% of nitrogen occupy substitutional sites. We also observe an obstruction of dislocation movement during crystal cooling. |
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