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Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures

Název česky Studie vrstev AlxGa1-xN/AlN/Si pomocí infračervené elipsometrie, Ramanova rozptylu a rtg difrakce
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WANG Chennan CAHA Ondřej MÜNZ Filip KOSTELNÍK Petr NOVÁK Tomáš HUMLÍČEK Josef

Rok publikování 2017
Druh Článek v odborném periodiku
Časopis / Zdroj Applied Surface Science
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www http://www.sciencedirect.com/science/article/pii/S0169433217304075
Doi http://dx.doi.org/10.1016/j.apsusc.2017.02.056
Obor Fyzika pevných látek a magnetismus
Klíčová slova Gallium nitride; Alloy; Semiconductor; Thin film; Wafer; MOCVD; Silicon; Infrared spectroscopy; Phonon; Ellipsometry; XRD; Raman
Popis We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0 <= x <= 1. The study focuses on providing essential physical quantities for the fabrication process control, namely the composition dependence of phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry, Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis. Based on the high quality and nearly strain-free AlxGa1-xN/AlN double layer samples, we determined the calibration curve for the A(1)(LO) phonon mode. We have also constructed the ellipsometry model which uses a-priori knowledge of experimentally measured A(1)(TO) phonon mode frequencies. From the best model fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropic refractive indices of the AlxGa1-xN alloys with a very satisfactory accuracy. (C) 2017 Elsevier B.V. All rights reserved.
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