Informace o publikaci

Optical properties of the crystalline silicon wafers described using the universal dispersion model

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FRANTA Daniel VOHÁNKA Jiří BRÁNECKÝ Martin FRANTA Pavel ČERMÁK Martin OHLÍDAL Ivan ČECH Vladimír

Rok publikování 2019
Druh Článek v odborném periodiku
Časopis / Zdroj Journal of Vacuum Science & Technology B
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://doi.org/10.1116/1.5122284
Doi http://dx.doi.org/10.1116/1.5122284
Klíčová slova Spectrophotometry;Gaussian broadening;Optical constants;Optical properties;Phonons;Dielectric properties
Popis The optical properties of a slightly boron doped float-zone crystalline silicon wafer are studied using ellipsometry and spectrophotometry in a wide spectral range from far IR to vacuum UV. One side of the wafer was cleaned in an argon plasma, which influenced the optical properties of silicon near the surface. The dielectric response of silicon was modeled using a simplified universal dispersion model which is constructed on the basis of parameterization of the joint density of states describing both the electronic and phonon excitations. Several variants of models describing phonon absorption and interband transitions are discussed. It was possible to accurately determine the optical constants of bulk silicon and the optical constants near the perturbed surface over a wide spectral range. These optical constants agree well with those found in other works. From the optical measurements, it was also possible to determine the thickness of the wafer and the static value of resistivity, and the determined values agreed with nominal values specified for the wafer.
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