Informace o publikaci

Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

Autoři

ISA Fabio JUNG Arik SALVALAGLIO Marco DASILVA Yadira Arroyo Rojas MEDUŇA Mojmír BARGET Michael KREILIGER Thomas ISELLA Giovanni ERNI Rolf PEZZOLI Fabio BONERA Emiliano NIEDERMANN Philippe ZWEIACKER Kai NEELS Antonia DOMMANN Alex GRONING Pierangelo MONTALENTI Francesco VON KANEL Hans

Rok publikování 2016
Druh Článek v odborném periodiku
Časopis / Zdroj MRS ADVANCES
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://www.cambridge.org/core/journals/mrs-advances/article/elastic-and-plastic-stress-relaxation-in-highly-mismatched-sigesi-crystals/E6FE1EC0597E73264DF061B98BC15069
Doi http://dx.doi.org/10.1557/adv.2016.355
Klíčová slova layers; heteroepitaxy; GaN
Popis We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.
Související projekty:

Používáte starou verzi internetového prohlížeče. Doporučujeme aktualizovat Váš prohlížeč na nejnovější verzi.

Další info