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Cyclic Silylselenides: Convenient Selenium Precursors for Atomic Layer Deposition

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CHARVOT Jaroslav POKORNÝ Danie ZAZPE Raul KRUMPOLEC Richard PAVLIŇÁK David HROMÁDKO Luděk PŘIKRYL Jan RODRIGUEZ-PEREIRA Jhonatan KLIKAR Milan JELÍNKOVÁ Veronika MACAK Jan M BUREŠ Filip

Rok publikování 2020
Druh Článek v odborném periodiku
Časopis / Zdroj CHEMPLUSCHEM
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www http://dx.doi.org/10.1002/cplu.202000108
Doi http://dx.doi.org/10.1002/cplu.202000108
Klíčová slova atomic layer deposition; molybdenum; nanostructures; selenium; transition metal dichalcogenides
Popis Three cyclic silylselenides were prepared in a straightforward manner. Property tuning has been achieved by varying the ring size and the number of embedded selenium atoms. All silylselenides possess improved resistance towards moisture and oxidation as well as high thermal robustness and sufficient volatility with almost zero residues. The six-membered diselenide proved to be particularly superior Se precursors for atomic layer deposition and allowed facile preparation of MoSe2 layers. Their structure and composition have been investigated by Raman and X-ray photoelectron spectroscopy as well as scanning electron microscopy revealing vertically aligned flaky shaped nanosheets.