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Mn-doping reveals a thermal gap and natural p-type conductivity in Bi2O2Se

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SOJKA Antonin ZICH Jan PLECHACEK Tomas LEVINSKY Petr NAVRATIL Jiri RULEOVA Pavlina SLANG Stanislav BENES Ludvik KNIZEK Karel HOLÝ Václav DRASAR Cestmir

Rok publikování 2025
Druh Článek v odborném periodiku
Časopis / Zdroj MATERIALS ADVANCES
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://pubs.rsc.org/en/content/articlelanding/2025/ma/d5ma00543d
Doi https://doi.org/10.1039/d5ma00543d
Klíčová slova Bi2O2Se; Mn doping; p-type conductivity; semiconductor; magnetic properties; substitutional defects
Popis Bi2O2Se is a semiconductor that is being intensively studied due to its many extraordinary properties. Since about 2010, research on polycrystals has focused on thermoelectric materials. For the last 10 years, single crystal research has been driven by its quasi 2D structure with unexpectedly high permittivity (?r ? 500), which promotes high electron mobility. Bi2O2Se thus outperforms other 2D materials in many parameters. However, the high permittivity is also responsible for the extremely low critical concentration of the metal–insulator transition (n ? 1015 cm-3). Thus, Bi2O2Se is so far only available as an n-type semiconductor largely with metal-like properties, although the electron concentration can range over 6 orders of magnitude (n ? 1015–1021 cm-3), reportedly due to the very high concentration of selenium vacancies or selenium antisites on the Bi site. In this paper, we consider Mn doping in Bi2O2Se, Bi2-xMnxO2Se. The Mn doping leads to a decrease in the electron concentration and, for the first time, to a transition of the material to p-type conductivity. A thermal gap (? 0.9 eV) can be deduced from the temperature dependence of the electrical conductivity. The p-type transition is related to the interaction of Mn with the defect structure of Bi2O2Se. Our experiments suggest that the most abundant defects, besides the Se vacancies VSe, are the substitutional defect Se atom at the Bi site, SeBi and the O atom at the Se site. From high resolution XRD analysis, we conclude that Mn reduces its concentration and brings the structure to the p-type state. From DFT calculations and magnetic data we infer the substitution of Bi by Mn (MnBi, in a high spin state, µ ? 5µB), although all experiments indicate a very low solubility nMn = 2.67 × 1018 cm-3 based on magnetic data.

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