Informace o publikaci

Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications

Autoři

VENKATACHALAM N. PRABHAHARAN M. DULASIMATHI D. MUTHURAMAMOORTHY Muthumareeswaran SENTHIL PERUMAL Thanka Rajan

Rok publikování 2026
Druh Recenzovaný odborný článek
Časopis / Zdroj JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://link.springer.com/article/10.1007/s10854-026-16997-4
Doi https://doi.org/10.1007/s10854-026-16997-4
Klíčová slova Mn-doped NaKSO4 single crystals; Third-order nonlinear optics
Popis Manganese-doped sodium potassium sulfate (Mn: NaKSO4) single crystals were successfully grown by the slow evaporation solution growth technique at room temperature, targeting sustainable material for high-performance nonlinear optical (NLO) and photonic applications. Single-crystal X-ray diffraction confirmed that the doped crystals crystallize in the hexagonal system, with slight lattice expansion indicating effective Mn2? incorporation. X-ray photoelectron spectroscopy verified the elemental composition and stable divalent oxidation state of manganese, confirming its substitutional incorporation without secondary phase formation. The laser damage threshold analysis revealed a high-power density tolerance of 8.86 GW/cm?2, demonstrating excellent resistance to intense laser irradiation and suitability for high-power optoelectronic devices. Dielectric investigations showed a moderate dielectric constant with remarkably low dielectric loss at higher frequencies and temperatures, reflecting reduced energy dissipation and enhanced polarization efficiency. Third order nonlinear optical properties were evaluated using the Z-scan technique, yielding an enhanced nonlinear refractive index and a large third order susceptibility of 2.283?×?10?11 esu, significantly exceeding that of conventional KDP crystals. The enhanced NLO response is attributed to Mn-induced electronic polarizability. The combined high laser damage resistance, low dielectric loss, and strong third order nonlinearity establish Mn doped NaKSO4 as an environmentally benign and efficient photonic material for advanced optoelectronic applications.

Používáte starou verzi internetového prohlížeče. Doporučujeme aktualizovat Váš prohlížeč na nejnovější verzi.

Další info