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AlxSiyOz coatings deposited by pulsed direct current reactive magnetron sputtering for dielectric applications

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DREVET Richard MAREK Ales VAŠINA Petr

Rok publikování 2026
Druh Recenzovaný odborný článek
Časopis / Zdroj CERAMICS INTERNATIONAL
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://www.sciencedirect.com/science/article/pii/S0272884226027963
Doi https://doi.org/10.1016/j.ceramint.2026.06.124
Klíčová slova Reactive magnetron sputtering; Ternary oxide; Aluminum; Silicon; Dielectric strength; Dielectric breakdown
Přiložené soubory
Popis This research aims to study the structure, chemical composition, and dielectric strength of aluminum silicon oxide (AlxSiyOz) coatings deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering at a constant temperature of 150 degrees C. Four targets containing different concentrations of aluminum and silicon are sputtered in an argon-oxygen atmosphere to produce ternary oxide coatings of AlxSiyOz. Argon flow is maintained at 60 sccm during deposition, and the impact of different oxygen flows is studied (Phi O2 = 3, 4, and 5 sccm). These experimental conditions produce AlxSiyOz coatings with the same columnar morphology and amorphous structure. On the other hand, the chemical composition, deposition rate, and dielectric strength of AlxSiyOz coatings are highly impacted by the target composition and oxygen flow rate used during deposition. The highest dielectric strength was obtained by sputtering an AlSi target (90 at.% of aluminum and 10 at.% of silicon) in a reactive atmosphere containing 60 sccm of argon and 5 sccm of oxygen.
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