Publication details

Amorphous gallium oxide grown by low-temperature PECVD

Authors

KOBAYASHI Eiji BOCCARD Mathieu JEANGROS Quentin RODKEY Nathan VRESILOVIC Daniel HESSLER-WYSER Aicha DÖBELI Max FRANTA Daniel DE WOLF Stefaan MORALES-MASIS Monica BALLIF Christophe

Type Article in Periodical
Magazine / Source Journal of Vacuum Science and Technology A
MU Faculty or unit

Faculty of Science

Citation
Doi http://dx.doi.org/10.1116/1.5018800
Keywords Chemical compounds; Optical properties; Thin films; Electron energy loss spectroscopy; Physics of gases
Description Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, theauthors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200°C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
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