prof. RNDr. Václav Holý, CSc.
Professor, Department of Condensed Matter Physics
office: pav. 09/02028
Kotlářská 267/2
611 37 Brno
phone: | +420 549 49 4360 |
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e‑mail: |
social and academic networks: |
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Total number of publications: 211
1997
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Strain relaxation in high electron mobility Si 1-x Ge x/Si structures
J. Appl. Phys., year: 1997, volume: (82)1997, edition: 15
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Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques
Thin Solid Films, year: 1997, volume: 1997, edition: 303
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X-ray reflectivity reciprocal space mapping of strained SiG /Si superlattices
II Nuovo Cimento, year: 1997, volume: 1997, edition: 19 D
1996
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Elastic strains in GaAs/AlAs quantum dots studied by high resolution. X-ray diffraction
Solid - State Electronics, year: 1996, volume: 40(1996), edition: 1-8
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High Resolution X-Ray Reciprocal Space Mapping
Acta Physica Polonica A, year: 1996, volume: 1996, edition: 89
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Interface evolution after thermal treatment of Tungsten/ Silicon multilayers
Acta Crystallographica A, Suppl., year: 1996, volume: 52, edition: -
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Interface roughness correlation in tungsten/silicon multilayers
J. Mag. Materials, year: 1996, volume: 1996, edition: 156
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Local Surface Deformations Induced by Interfacial Misfit Dislocations in Lattice-mismatched heteroepitaxy of EuTe on PbTe(111)
Surface Science, year: 1996, volume: 365(1996), edition: -
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Many crystal x-ray diffractometry on superlattices
Heterostructure Epitaxy and Devices. NATO ASI Series 3. Kluwer Acad. Publl. Dordrecht (D4), year: 1996, volume: 1996, edition: 11
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Quantitative analysis of elastic strains in GaAs/AlAs quantum dots
Physica B, year: 1996, volume: 1996, edition: 227