Publication details

Metrology of epitaxial layers *GaN


CAHA Ondřej WANG Chennan MÜNZ Filip HUMLÍČEK Josef

Year of publication 2014
MU Faculty or unit

Central European Institute of Technology

Description *Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. · Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. · Perform correlation of measurement with FTIR system. · Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. · Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers.

You are running an old browser version. We recommend updating your browser to its latest version.

More info