Publication details

Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

Authors

ISA Fabio JUNG Arik SALVALAGLIO Marco DASILVA Yadira Arroyo Rojas MEDUŇA Mojmír BARGET Michael KREILIGER Thomas ISELLA Giovanni ERNI Rolf PEZZOLI Fabio BONERA Emiliano NIEDERMANN Philippe ZWEIACKER Kai NEELS Antonia DOMMANN Alex GRONING Pierangelo MONTALENTI Francesco VON KANEL Hans

Year of publication 2016
Type Article in Periodical
Magazine / Source MRS ADVANCES
MU Faculty or unit

Faculty of Science

Citation
Web https://www.cambridge.org/core/journals/mrs-advances/article/elastic-and-plastic-stress-relaxation-in-highly-mismatched-sigesi-crystals/E6FE1EC0597E73264DF061B98BC15069
Doi http://dx.doi.org/10.1557/adv.2016.355
Keywords layers; heteroepitaxy; GaN
Description We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.
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