Publication details
Morphological instability in InAs/GaSb superlattices due to interfacial bonds
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Periodical |
| Magazine / Source | Physical Review Letters |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | STRAINED-LAYER SUPERLATTICES; MOLECULAR-BEAM EPITAXY; SURFACE-DIFFUSION; MU-M; GROWTH; LATTICE |
| Description | Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. |
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