Publication details

Oxidation resistance and mechanical properties of sputter-deposited Ti0.9Al0.1B2-y thin films

Authors

THORNBERG Jimmy MRAZ Stanislav PALISAITIS Justinas KLIMASHIN Fedor F ONDRAČKA Pavel BAKHIT Babak POLCIK Peter KOLOZSVARI Szilard HULTMAN Lars PETROV Ivan PERSSON Per O a SCHNEIDER Jochen M ROSEN Johanna

Year of publication 2022
Type Article in Periodical
Magazine / Source SURFACE & COATINGS TECHNOLOGY
Citation
Doi http://dx.doi.org/10.1016/j.surfcoat.2022.128187
Description Direct-current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HiPIMS) were used to deposit understoichiometric Ti(1-x)Al(x)B(2-y )diboride coatings by sputtering from a segmented TiB2-AlB2 target using Ar and Kr as sputtering gas. For films with a fixed Al/(Ti + Al) ratio of x = 0.1 (Ti0.9Al0.1B2-y), the B content was varied with y & ISIN; (0.1, 0.6 and 0.7). For films with a fixed y = 0.7 (Ti1-xAlxB1.3), the Al content was varied with x & ISIN; (0.1, 0.4 and 0.7). Evaluation of the mechanical properties of the Ti1-xAlxB1.3 samples showed a reduction in both hardness and elastic modulus with increasing Al concentration, while the Ti0.9Al0.1B2-y samples showed a hardness increase with decreasing B content. Thus, Ti0.9Al0.1B1.3 films exhibited a superior hardness of 46.2 +/- 1.1 GPa and an elastic modulus of 523 & PLUSMN; 7 GPa, compared to the values for Ti0.9Al0.1B1.4 and Ti0.9Al0.1B1.9, showing a hardness of 44 +/- 1 GPa and 36 +/- 1 GPa, and an elastic modulus of 569 +/- 7 GPa and 493 +/- 6 GPa, respectively. The oxidation behavior of the mechanically most promising Ti0.9Al0.1B2-y sample series was investigated through air-annealing at 600 C for durations from 1 h to 10 h. All films formed a mixed non-conformal Al2O3-TiO2 oxide scale which acts as an inward and outward diffusion barrier, significantly reducing the oxidation rate compared to TiBz films, which form an oxide scale consisting of porous TiO2. The thinnest oxide scale after 10 h was found in the B-deficient samples, Ti0.9Al0.1B1.3 and Ti0.9Al0.1B1.4, at ~200 nm, which is significantly below that for Ti0.9Al0.1B1.9 at 320 nm. The enhanced oxidation resistance of highly understoichiometric films is due to the elimination of the B-rich tissue phase that is present at the grain boundaries for higher B content, where the latter has been shown to enhance the rate of oxidation in borides.

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