Publication details

Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Authors

SALA Elisa Maddalena KLENOVSKÝ Petr

Year of publication 2023
Type Article in Periodical
Magazine / Source New Journal of Physics
MU Faculty or unit

Faculty of Science

Citation
Web Odkaz na text vysledku
Doi http://dx.doi.org/10.1088/1367-2630/ad0856
Keywords quantum dot; nanomemory; electronic structure; k.p approximation; antimonides
Description We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to~ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.

More info