Informace o publikaci
Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications
| Autoři | |
|---|---|
| Rok publikování | 2023 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | New Journal of Physics |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | Odkaz na text vysledku |
| Doi | http://dx.doi.org/10.1088/1367-2630/ad0856 |
| Klíčová slova | quantum dot; nanomemory; electronic structure; k.p approximation; antimonides |
| Popis | We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to~ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p. |
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