Publication details

X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers


KLANG Pavel HOLÝ Václav ŠTOUDEK Richard ŠIK Jan

Year of publication 2004
Type Article in Proceedings
Conference Proceedings of The Ninth Scientific and Business Conference SILICON 2004
MU Faculty or unit

Faculty of Science

Field Solid matter physics and magnetism
Keywords X-ray; Diffuse Scattering; Defect; Silicon; Nitrogen doping
Description We have studied nitrogen-doped silicon wafers (001) using triple-axis high-resolution X-ray diffraction (HRXRD). The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space map determines the type of dislocation loops and from cross section we can determine their radius and concentration. These parameters were combined with the results from infrared absorption spectroscopy method.
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