Annealing studies of high Ge composition Si/SiGe multilayers

• Authors: MEDUŇA Mojmír; NOVÁK Jiří; HOLÝ Václav; BAUER Günther; FALUB Claudiu; TSUJINO Soichiro; MÜLLER Elisabeth; GRÜTZMACHER Detlev; CAMPIDELLI Yves; KERMARREC Olivier; BENSAHEL Daniel
• Year of publication: 2004
• Type: Article in Periodical
• Magazine / Source: Zeitschrift fur Kristalographie
• MU Faculty or unit: Faculty of Science
• Field: Solid matter physics and magnetism
• Keywords: Reflectivity; X-ray diffraction; Annealing; Diffusion; Si/SiGe multiple quantum wells
• Description: Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C.

Related projects

• Physical properties of new materials and layered structures