Publication details

X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers


KLANG Pavel HOLÝ Václav KUBĚNA Josef ŠTOUDEK Richard ŠIK Jan

Year of publication 2005
Type Article in Periodical
Magazine / Source J. Phys. D: Appl. Phys.
MU Faculty or unit

Faculty of Science

Field Solid matter physics and magnetism
Keywords X-ray; diffuse scattering; defects; nitrogen; silicon
Description We have studied nitrogen-doped silicon wafers from origin, middle and end of the ingot, annealed at low and high temperatures, using triple-axis high-resolution X-ray diffraction. The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space maps determines the type of dislocation loops and from cross sections we can obtain the radius and concentration of the loops. These parameters were combined with the results from selective etching and infrared absorption spectroscopy method.
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