Mgr. Petr Klenovský, Ph.D.
Researcher III, Department of Condensed Matter Physics
Office: pav. 09/02020
Kotlářská 267/2
611 37 Brno
Phone: | +420 549 49 3193 |
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social and academic networks: |
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Total number of publications: 33
2024
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Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
Applied Physics Letters, year: 2024, volume: 124, edition: 6, DOI
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Self-Aligned Photonic Defect Microcavity Lasers with Site-Controlled Quantum Dots
Laser and Photonics Reviews, year: 2024, DOI
2023
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Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications
New Journal of Physics, year: 2023, volume: 25, edition: 11, DOI
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GaAs quantum dots under quasiuniaxial stress: Experiment and theory
Physical Review B, year: 2023, volume: 107, edition: 23, DOI
2022
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Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots
Nanomaterials, year: 2022, volume: 12, edition: 4, DOI
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Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots
Physical Review B, year: 2022, volume: 105, edition: 19, DOI
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Interplay between multipole expansion of exchange interaction and Coulomb correlation of exciton in colloidal II–VI quantum dots
Electronic Structure, year: 2022, volume: 4, edition: 1, DOI
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Modeling electronic and optical properties of III–V quantum dots—selected recent developments
Light: Science & Applications, year: 2022, volume: 11, edition: 1, DOI
2021
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Electric field induced tuning of electronic correlation in weakly confining quantum dots
Physical Review B, year: 2021, volume: 104, edition: 16, DOI
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On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
New Journal of Physics, year: 2021, volume: 23, edition: 10, DOI