Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

• Authors: VOLOBUEV V.; MANDAL P.; GALICKA M.; CAHA Ondřej; SANCHEZ-BARRIGA J.; DISANTE D.; VARYKHALOV A.; KHIAR A.; PICOZZI S.; BAUER Günther; KACMAN P.; BUCZKO R.; RADER O.; SPRINGHOLZ Günter
• Year of publication: 2017
• Type: Article in Periodical
• Magazine / Source: ADVANCED MATERIALS
• MU Faculty or unit: Faculty of Science
• Doi: https://doi.org/10.1002/adma.201604185
• Field: Solid matter physics and magnetism
• Keywords: MOLECULAR-BEAM EPITAXY; SNTE; GROWTH; PBTE; STATES; REALIZATION; INTERFACE; SURFACES; STRAIN; PHASE
• Description: The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.