Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping

• Authors: LI J.H.; HOLÝ Václav
• Year of publication: 1995
• Type: Article in Periodical
• Magazine / Source: Semicond. Sci. Technol.
• MU Faculty or unit: Faculty of Science
• Field: Solid matter physics and magnetism

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