Publication details

Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping

Authors

LI J.H. HOLÝ Václav

Year of publication 1995
Type Peer-reviewed scientific article
Magazine / Source Semicond. Sci. Technol.
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
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