Publication details

AlxSiyOz coatings deposited by pulsed direct current reactive magnetron sputtering for dielectric applications

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Authors

DREVET Richard MAREK Ales VAŠINA Petr

Year of publication 2026
Type Peer-reviewed scientific article
Magazine / Source CERAMICS INTERNATIONAL
MU Faculty or unit

Faculty of Science

Citation
web https://www.sciencedirect.com/science/article/pii/S0272884226027963
Doi https://doi.org/10.1016/j.ceramint.2026.06.124
Keywords Reactive magnetron sputtering; Ternary oxide; Aluminum; Silicon; Dielectric strength; Dielectric breakdown
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Description This research aims to study the structure, chemical composition, and dielectric strength of aluminum silicon oxide (AlxSiyOz) coatings deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering at a constant temperature of 150 degrees C. Four targets containing different concentrations of aluminum and silicon are sputtered in an argon-oxygen atmosphere to produce ternary oxide coatings of AlxSiyOz. Argon flow is maintained at 60 sccm during deposition, and the impact of different oxygen flows is studied (Phi O2 = 3, 4, and 5 sccm). These experimental conditions produce AlxSiyOz coatings with the same columnar morphology and amorphous structure. On the other hand, the chemical composition, deposition rate, and dielectric strength of AlxSiyOz coatings are highly impacted by the target composition and oxygen flow rate used during deposition. The highest dielectric strength was obtained by sputtering an AlSi target (90 at.% of aluminum and 10 at.% of silicon) in a reactive atmosphere containing 60 sccm of argon and 5 sccm of oxygen.
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