Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

• Authors: VON KÄNEL Hans; ISA Fabio; FALUB Claudiu Valentin; BARTHAZY E. J.; MÜLLER Elisabeth; CHRASTINA Daniel; ISELLA Giovanni; KREILIGER Thomas; TABOADA Alfonso; MEDUŇA Mojmír; KAUFMANN R.; NEELS A.; DOMMANN Alex; NIEDERMANN Philippe; MANCARELLA F.; MAUCERI M.; PUGLISI M.; CRIPPA D.; LA VIA F.; ANZALONE R.; PILUSO N.; BERGAMASCHINI Roberto; MARZEGALLI Anna; MIGLIO Leo
• Year of publication: 2014
• Type: Article in Proceedings
• Conference: SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES
• MU Faculty or unit: Central European Institute of Technology
• Web: http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract
• Doi: http://dx.doi.org/10.1149/06406.0631ecst
• Field: Solid matter physics and magnetism
• Keywords: Aspect ratio; Chemical vapor deposition; Crystals; Dislocations; Germanium; Silicon; heteroepitaxy
• Description: We have recently demonstrated for the example of Ge/Si(001) that crystal defects, wafer bowing can be avoided by combining deep substrate patterning, resulting in dense arrays of highly perfect three-dimensional epitaxial crystals. Here we discuss the extension of the method to layer/substrate combinations with lattice misfits ranging from zero for pure Si/Si(001) up to 20% for 3C-SiC/Si(001).

Related projects

• CEITEC - Central European Institute of Technology
• Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies