Publication details

Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

Authors

VON KÄNEL Hans ISA Fabio FALUB Claudiu Valentin BARTHAZY E. J. MÜLLER Elisabeth CHRASTINA Daniel ISELLA Giovanni KREILIGER Thomas TABOADA Alfonso MEDUŇA Mojmír KAUFMANN R. NEELS A. DOMMANN Alex NIEDERMANN Philippe MANCARELLA F. MAUCERI M. PUGLISI M. CRIPPA D. LA VIA F. ANZALONE R. PILUSO N. BERGAMASCHINI Roberto MARZEGALLI Anna MIGLIO Leo

Year of publication 2014
Type Article in Proceedings
Conference SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract
Doi http://dx.doi.org/10.1149/06406.0631ecst
Field Solid matter physics and magnetism
Keywords Aspect ratio; Chemical vapor deposition; Crystals; Dislocations; Germanium; Silicon; heteroepitaxy
Description We have recently demonstrated for the example of Ge/Si(001) that crystal defects, wafer bowing can be avoided by combining deep substrate patterning, resulting in dense arrays of highly perfect three-dimensional epitaxial crystals. Here we discuss the extension of the method to layer/substrate combinations with lattice misfits ranging from zero for pure Si/Si(001) up to 20% for 3C-SiC/Si(001).
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