Publication details

Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing

Authors

KUBĚNA Josef KUBĚNA Alan CAHA Ondřej MEDUŇA Mojmír

Year of publication 2009
Type Article in Periodical
Magazine / Source J.Phys.: Condens. Matter
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords Silicon; vacancies; Interstitials; nucleation
Description The kinetics of the vacancy and self interstitial processes in Si wafers are studied in this paper. Detailed insight into nucleation processes, out diffusion and vacancy interstitial recombination during the RTA leads to a new model of interaction between vacancies and oxygen.
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