Project information
Project information
Nucleation and growth of oxygen precipitates in silicon
- Project Identification
- GA202/09/1013
- Project Period
- 1/2009 - 12/2011
- Investor / Pogramme / Project type
-
Czech Science Foundation
- Standard Projects
- MU Faculty or unit
-
Faculty of Science
- Mgr. Mojmír Meduňa, Ph.D.
- doc. RNDr. Zdeněk Bochníček, Dr.
- Mgr. Ondřej Caha, Ph.D.
- Alan Kuběna
- doc. RNDr. Josef Kuběna, CSc.
- doc. RNDr. Petr Mikulík, Ph.D.
- Keywords
- nucleation, precipitation, silicon
- Cooperating Organization
-
Institute of Materials Physics of the ASCR, v. v. i.
- Responsible person RNDr. Milan Svoboda, CSc.
Publications
Total number of publications: 18
2012
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Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods
Physica B condensed matter, year: 2012, volume: 407, edition: 15, DOI
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Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers
Journal of crystal growth, year: 2012, volume: 348, edition: 1, DOI
2011
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Homogeneous and heterogeneous nucleation of oxygen in Si-CZ
Solid State Phenomena, year: 2011, volume: Neuveden, edition: 178-179
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Oxygen precipitation studied by x-ray diffraction techniques
Solid State Phenomena, year: 2011, volume: Neuveden, edition: 178-179
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Study of oxide precipitates in silicon using X-ray diffraction techniques
physica status solidi (a), Applied research, year: 2011, volume: 208, edition: 11, DOI
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X-RAY LAUE DIFFRACTION STUDY OF OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON
Materials Structure in Chemistry, Biology, Physics and Technology, year: 2011, volume: 18, edition: 3
2010
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Comparative study of multilayers used in monochromators for synchrotron-based coherent hard X-ray imaging
Journal of Synchrotron Radiation, year: 2010, volume: 17, edition: 4
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Defect Engineering in Czochralski-grown Silicon Studied by TEM
Year: 2010, type: Conference abstract
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Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing
Year: 2010, type: Conference abstract
-
X-ray scattering study of oxide precipitates in Cz-Si
Year: 2010, type: Conference abstract