Informace o publikaci
Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations
| Autoři | |
|---|---|
| Rok publikování | 2021 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Journal of Applied Crystallography |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | https://doi.org/10.1107/S1600576720014764 |
| Doi | http://dx.doi.org/10.1107/S1600576720014764 |
| Klíčová slova | V-pits; X-ray diffraction; InGaN; reciprocal space maps; strain |
| Popis | V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from a series of samples grown by metal-organic vapor phase epitaxy. Analysis of the principal strains and their directions in the vicinity of V-pits explains the pseudomorphic position of the InGaN epilayer peak observed by X-ray diffraction reciprocal space mapping. The top part of the InGaN layer involving V-pits relieves the strain by elastic relaxation. Plastic relaxation by misfit dislocations is not observed. The creation of the V-pits appears to be a sufficient mechanism for strain relaxation in InGaN/GaN epilayers. |