Informace o publikaci
Origin of the metastability of phosphorus or boron doped a-Si:H films
| Autoři | |
|---|---|
| Rok publikování | 2000 |
| Druh | Článek ve sborníku |
| Konference | Electronic Devices and Systems Y2K - Proceedings |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | amorphous silicon; doping; metastability |
| Popis | The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role. |
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